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BLS2933-100
Microwave power LDMOS transistor
Rev. 01 -- 1 August 2006 Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
Table 1: Typical performance tp = 200 s; = 12 %; Tcase = 25 C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 100 Gp (dB) 8 D (%) 40 IDq (mA) 20
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use
1.3 Applications
I S-band radar applications
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLS2933-100 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -65 Max 65 15 12 +150 200 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Zth(j-h) Thermal characteristics Parameter Conditions Typ 0.4 Unit K/W transient thermal impedance from Th = 25 C; junction to heatsink tp = 200 s; = 12 %
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
2 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Parameter drain-source breakdown voltage Conditions VGS = 0 V; ID = 2.1 mA Min 65 2.5 27 Typ 3.1 3.3 30 9.0 0.09 2.5 Max 3.5 4.5 2 200 Unit V V V A A nA S pF
gate-source threshold voltage VDS = 10 V; ID = 180 mA gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance VDS = 28 V; IDS = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 10 A VGS = VGS(th) + 6 V; ID = 6 A VGS = 0 V; VDS = 28 V; f = 1 MHz
7. Application information
Table 7. Application information RF performance in common source class-AB circuit; Th = 25 C; tp = 200 s; = 12 %; Zth(mb-h) = 0.15 K/W; unless otherwise specified. Symbol foper VCC tp PL PL(1dB) Gp D Pdroop(pulse) tr tf VSWRload IRL Parameter operating frequency supply voltage pulse duration duty cycle output power output power at 1 dB gain compression power gain drain efficiency pulse droop power rise time fall time load voltage standing wave ratio input return loss Conditions Min 2.9 100 6 33 10 : 1 Typ 200 12 120 8 40 0.1 20 6 -10 Max 3.3 32 0.5 50 50 dB Unit GHz V s % W W dB % dB ns ns
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
3 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
Typical impedance ZS 3.3 - j5.6 3.7 - j5.3 5.9 - j5.8 6.8 - j3.4 6.6 - j2.7 ZL 3.5 - j3.3 3.1 - j3.6 3.3 - j3.3 3.2 - j3.5 3.1 - j3.6
Table 8. f GHz 2.9 3.0 3.1 3.2 3.3
drain ZL gate ZS
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS2933-100 is capable of withstanding a load mismatch corresponding to VSWR > 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 20 mA; PL = 100 W pulsed, tp = 200 s; = 12 %.
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
4 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
10 Gp (dB) 8 D Gp 6
001aaf066
50 D (%) 40
10 Gp (dB) 8
001aaf070
(1) (2) (3) (4) (5)
30
6
4
20
4
2
10
2
0 2.8
3.0
3.2 f (GHz)
0 3.4
0 0 40 80 120 PL (W) 160
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %; PL = 100 W.
(1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
Fig 2. Power gain and drain efficiency as functions of frequency; typical values
50 D (%) 40
(1) (2) (3) (4) (5)
Fig 3. Power gain as a function of load power; typical values
160 PL (W) 120
001aaf072
001aaf071
(1) (2) (3)
(4)
(5)
30 80 20
40 10
0 0 40 80 120 PL (W) 160
0 0 10 20 Pi (W) 30
(1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
(1) f = 2.9 MHz. (2) f = 3.0 MHz. (3) f = 3.1 MHz. (4) f = 3.2 MHz. (5) f = 3.3 MHz. VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
Fig 4. Efficiency as a function of power load; typical values
BLS2933-100_1
Fig 5. Load power as a function of input power; typical values
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
5 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
12 Gp (dB) 10
(3) (2) (1)
001aaf073
10 Gp (dB)
001aaf074
8
(1) (2) (3)
8
6
6 2.8
3.0
3.2 f (GHz)
3.4
4 2.8
3.0
3.2 f (GHz)
3.4
(1) IDq = 20 mA. (2) IDq = 150 mA. (3) IDq = 500 mA. VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %; PL = 100 W.
(1) tp = 100 s. (2) tp = 300 s. (3) tp = 500 s. VDS = 32 V; IDq = 20 mA; tp = 100 s, 200 s and 500 s; = 10 %; PL = 100 W.
Fig 6. Power gain as a function of frequency and IDq; typical values
50 D (%)
Fig 7. Power gain as a function of frequency; typical values
001aaf081
45
(1) (2) (3)
40
35 2.8
3.0
3.2 f (GHz)
3.4
(1) tp = 100 s. (2) tp = 300 s. (3) tp = 500 s. VDS = 32 V; IDq = 20 mA; = 10 %; PL = 100 W.
Fig 8. Efficiency as a function of frequency; typical values
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
6 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
1.0 Zth (K/W) 0.8
001aaf082
0.6
0.4
(1) (2) (3) (4) (5)
0.2
0 10-5
10-4
10-3 tp (s)
10-2
(1) 1 % duty cycle (2) 2 % duty cycle (3) 5 % duty cycle (4) 10 % duty cycle (5) 20 % duty cycle
Fig 9. Thermal resistance as function of pulse duration and duty cycle; typical values
800 Pmax (W) 600
001aaf083
(1) (2) (3) (4)
400
200
0 10-5
10-4
10-3 tp (s)
10-2
Th = 70 C (1) 1 % duty cycle (2) 2 % duty cycle (3) 10 % duty cycle (4) 20 % duty cycle
Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 C junction temperature
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
7 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
8. Test information
C2
C3
C4
C5
C6
C7 C8 C9 C12
+Vgs
R1 C11
+Vds
R2 L1
C1
C10
BLS2933-100 in
BLS2933-100 out
001aaf084
The components are situated on one side of the copper-clad Duroid 6006 Printed-Circuit Board (PCB). Both the input and output PCB are 40 mm x 60 mm with r = 6.15 and thickness 0.64 mm. See Table 9 for list of components
Fig 11. Component layout for test circuit Table 9. List of components (see Figure 11) Description
[1]
Component
Value 22 pF 470 pF 4.7 F; 50 V 220 F; 63 V 560 49.9 ; 0.6 W
Dimensions
Catalogue number
C1, C2, C4, C5, multilayer ceramic chip capacitor C6, C7, C10 C3, C8, C9 C11 C12 R1 R2 L1 N1 N2
[1] [2]
multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor resistor metafilm resistor copper wire 1 mm diameter N-connector male N-connector female
[2]
Kemet T491D475K050AS SMD 0805 length of loop = 20 mm; height of loop = 10 mm Suhner 13N-50-057/1 Suhner 23N-50-057/1
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality.
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
BLS2933-100_1
Product data sheet
Rev. 01 -- 1 August 2006
8 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 12. Package outline SOT502A
BLS2933-100_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
9 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
10. Revision history
Table 10. Revision history Release date 20060801 Data sheet status Product data sheet Change notice Supersedes Document ID BLS2933-100_1
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
10 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BLS2933-100_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 1 August 2006
11 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
13. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 1 August 2006 Document identifier: BLS2933-100_1

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